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1 IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet dpak pg-to220fp mosfet 600vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. pleasenote:note1:formosfetparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. note2:*6r650ceisfullpakmarkingonly table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 650 m w i d. 9.9 a q g.typ 20.5 nc i d,pulse 19 a e oss @400v 1.9 j type/orderingcode package marking relatedlinks IPD60R650CE pg-to 252 ipa60r650ce pg-to 220 fullpak 60s650ce / 6r650ce* see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 9.9 6.2 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 19 a t c =25c avalanche energy, single pulse e as - - 133 mj i d =1.3a; v dd =50v; see table 11 avalanche energy, repetitive e ar - - 0.20 mj i d =1.3a; v dd =50v; see table 11 avalanche current, repetitive i ar - - 1.3 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (non fullpak) to-251 p tot - - 82 w t c =25c storage temperature t stg -40 - 150 c - operating junction temperature t j -40 - 150 c - continuous diode forward current i s - - 7 a t c =25c diode pulse current 2) i s,pulse - - 19 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 9 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 9 power dissipation (fullpak) to-220fp p tot - - 28 w t c =25c mounting torque (fullpak) to-220fp - - - 50 ncm m2.5 screws insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 2thermalcharacteristics table3thermalcharacteristics(fullpak)to-220fp values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.5 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max . to252 equivalent, maximum duty cycle d=0.50 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet table4thermalcharacteristicsto-252 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 1.52 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave & reflow soldering allowed t sold - - 260 c reflow msl3 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table5staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =0.25ma gate threshold voltage v (gs)th 2.5 3.0 3.5 v v ds = v gs , i d =0.2ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.54 1.40 0.65 - w v gs =10v, i d =2.4a, t j =25c v gs =10v, i d =2.4a, t j =150c gate resistance r g - 10 - w f =1mhz,opendrain table6dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 440 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 30 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 21 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 88 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 10 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable10 rise time t r - 8 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable10 turn-off delay time t d(off) - 58 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable10 fall time t f - 11 - ns v dd =400v, v gs =13v, i d =3a, r g =6.8 w ;seetable10 table7gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 2.5 - nc v dd =480v, i d =3a, v gs =0to10v gate to drain charge q gd - 10.5 - nc v dd =480v, i d =3a, v gs =0to10v gate charge total q g - 20.5 - nc v dd =480v, i d =3a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =3a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet table8reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =3a, t j =25c reverse recovery time t rr - 250 - ns v r =400v, i f =3a,d i f /d t =100a/s; see table 9 reverse recovery charge q rr - 2.1 - c v r =400v, i f =3a,d i f /d t =100a/s; see table 9 peak reverse recovery current i rrm - 16 - a v r =400v, i f =3a,d i f /d t =100a/s; see table 9 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 p tot =f( t c ) diagram2:powerdissipation(fullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 p tot =f( t c ) diagram3:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t diagram4:max.transientthermalimpedance(fullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet diagram5:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram6:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram7:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram8:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet diagram9:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 4 8 12 16 20 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram10:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 3 6 9 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram11:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 10 12 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 v 5 v 5.5 v 6 v 6.5 v 7 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram12:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 98% typ r ds(on) =f( t j ); i d =2.4a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet diagram13:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram14:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =3.0apulsed;parameter: v dd diagram15:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram16:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 25 50 75 100 125 150 e as =f( t j ); i d =1.3a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet diagram17:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =0.25ma diagram18:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram19:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
12 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 5testcircuits table9diodecharacteristics table10switchingtimes table11unclampedinductiveload test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
13 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 6packageoutlines figure1outlinepg-to252,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
14 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet figure2outlinepg-to220fullpak,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
15 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet 7appendixa table12relatedlinks ? ifxcoolmos tm cewebpage: www.infineon.com ? ifxcoolmos tm ceapplicationnote: www.infineon.com ? ifxcoolmos tm cesimulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
16 600vcoolmosacepowertransistor IPD60R650CE,ipa60r650ce rev.2.2,2016-08-08 final data sheet revisionhistory IPD60R650CE, ipa60r650ce revision:2016-08-08,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.0 2014-09-25 release of final version 2.1 2016-03-31 modified id, rthjc. modified soa and zthjc curves 2.2 2016-08-08 added full pak marking on page 1, revised full pak package drawing on page 14 and changed to252 package solder reflow rating to msl3 on page 4 trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00181328 2.5 revision 01 29-04-2016 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.047 0.092 0.394 0.503 0.118 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 1.20 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 3 29.75 0.90 0.63 1.50 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.80 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.110 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.047 1.20 1.50 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3

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